Drain Current Characteristics of Carbon-nanotube FET (CNTFET) with 𝑺𝒊𝑶𝟐,Zr𝑶𝟐 and Hf𝑶𝟐 as Dielectric Materials using FETToy Code
نویسندگان
چکیده
منابع مشابه
A novel lightly doped drain and source Carbon nanotube field effect transistor (CNTFET) with negative differential resistance
In this paper, we propose and evaluate a novel design of a lightly doped drain and source carbon nanotube field effect transistor (LDDS-CNTFET) with a negative differential resistance (NDR) characteristic, called negative differential resistance LDDS-CNTFET (NDR-LDDS-CNTFET). The device was simulated by using a non equilibrium Green’s function method. To achieve this phenomenon, we have created...
متن کاملA novel lightly doped drain and source Carbon nanotube field effect transistor (CNTFET) with negative differential resistance
In this paper, we propose and evaluate a novel design of a lightly doped drain and source carbon nanotube field effect transistor (LDDS-CNTFET) with a negative differential resistance (NDR) characteristic, called negative differential resistance LDDS-CNTFET (NDR-LDDS-CNTFET). The device was simulated by using a non equilibrium Green’s function method. To achieve this phenomenon, we have created...
متن کاملa novel lightly doped drain and source carbon nanotube field effect transistor (cntfet) with negative differential resistance
in this paper, we propose and evaluate a novel design of a lightly doped drain and source carbon nanotube field effect transistor (ldds-cntfet) with a negative differential resistance (ndr) characteristic, called negative differential resistance ldds-cntfet (ndr-ldds-cntfet). the device was simulated by using a non equilibrium green’s function method. to achieve this phenomenon, we have created...
متن کاملCarbon Nanotube Fet Based Full Adder
High speed Full-Adder (FA) module is an important element in designing high performance arithmetic circuits. In this paper, I propose a high speed multiple-valued logic FA module. The proposed FA is designed and constructed with the use of 3 capacitors and 14 transistors, wh e r e t h e t r a n s i s t or s a r e c o n s t r u c t e d b y carbon nano-tube field effect transistor (CNFET) technol...
متن کاملEfficient Parameters Selection for CNTFET Modelling Using Artificial Neural Networks
In this article different types of artificial neural networks (ANN) were used for CNTFET (carbon nanotube transistors) simulation. CNTFET is one of the most likely alternatives to silicon transistors due to its excellent electronic properties. In determining the accurate output drain current of CNTFET, time lapsed and accuracy of different simulation methods were compared. The training data for...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: NIPES Journal of Science and Technology Research
سال: 2020
ISSN: 2682-5821
DOI: 10.37933/nipes/2.2.2020.22